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Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy

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8 Author(s)
Toyoda, S. ; Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan ; Okabayashi, J. ; Kumigashira, H. ; Oshima, M.
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We have performed photoemission spectroscopy of high-k gate insulators HfO2/HfSiON/Si to investigate the interlayer formation by Hf metal predeposition and the annealing effect systematically. Comparing the line shapes of core-level photoemission spectra for two systems with and without Hf-metal predeposition, we found that Hf-metal predeposition effectively reduces the growth of interface layer. Hf 4f core-level spectra revealed that the annealing at 1000 °C for both samples causes the formation of the metallic Hf and Hf-silicide clusters. Surface morphology was also observed by atomic force microscopy. © 2004 American Institute of Physics.

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Applied Physics Letters  (Volume:84 ,  Issue: 13 )