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Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

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10 Author(s)
Jiang, J. ; Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208 ; Mi, K. ; Tsao, S. ; Zhang, W.
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We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×1010 cm Hz1/2/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T=77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 13 )

Date of Publication:

Mar 2004

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