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Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs

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3 Author(s)
Desplanque, L. ; Institut d’Electronique de Microélectronique et de Nanotechnologie, U.M.R. C.N.R.S. 8520, Avenue Poincaré Boîte Postale 69, F-59652 Villeneuve d’Ascq Cédex, France ; Lampin, J.F. ; Mollot, F.

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We present an electro-optical method to measure very high frequency characteristics of planar electronic devices. This method allows one to generate and detect subpicosecond electrical pulses on a coplanar stripline using photoconduction and electroabsorption sampling in transferred low-temperature-grown epitaxial layers. The epitaxial lifted-off films are directly van der Waals bonded on the transmission line under test. Good switching efficiency and short electrical rise time (≪490 fs) are measured. A bandwidth of 2.5 THz with 60 dB of dynamic range is obtained. This confers to the technique a large field of applications in ultrahigh-speed electronic measurements. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 12 )