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High-performance carbon nanotube transistors on SrTiO3/Si substrates

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9 Author(s)
Kim, B.M. ; Department of Physics and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742 ; Brintlinger, T. ; Cobas, E. ; Fuhrer, M.S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1682691 

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube–electrode interface due to the high-κ SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 11 )

Date of Publication:

Mar 2004

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