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High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

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2 Author(s)
Wei Chih Peng ; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China ; Sermon Wu, YewChung

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High-power light-emitting diodes (LEDs) fabricated on Cu substrates were investigated in this study. The AlGaInP LED structure was bonded to a Cu substrate by using indium-tin-oxide as the diffusion barrier layer. It was found that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA, which was eight times higher than that used in traditional GaAs-substrate LEDs. The luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which was three times higher than that of the GaAs-substrate LEDs. © 2004 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:84 ,  Issue: 11 )