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Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

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6 Author(s)
Ueno, K. ; Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan ; Inoue, H. ; Akoh, H. ; Kawasaki, M.
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A field-effect transistor has been constructed that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect (FE) mobility is 0.1 cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 9 )