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In order to understand the effects of plasma parameters on the nanotube formation and further controlled growth, we have investigated the optimal growth condition using a rf plasma-enhanced chemical vapor deposition method. The magnetic field introduced for a magnetron discharge enhances the nanotube growth as a result of the plasma-density increment and the self-bias reduction of a rf electrode. It is also found that the optimum ion flux and ion bombardment energy is a key parameter for the uniform, well-aligned, and density-controlled nanotube growth. © 2003 American Institute of Physics.