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Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

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7 Author(s)
Jang, Kee-Youn ; Japan Society for the Promotion of Science (JSPS)-Domestic Research Fellow, National Institute of Advanced Industrial Science and Technology (AIST)CREST, Japan Science and Technology (JST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan ; Sugaya, T. ; Hahn, Cheol-Koo ; Ogura, Mutsuo
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The effects of negative differential resistance (NDR) have been clearly observed in 50-nm-gate InGaAs/InAlAs trench-type quantum-wire (QWR) field-effect transistors (FETs), which are fabricated by atomic hydrogen-assisted molecular-beam epitaxy. The NDR onset voltage is as low as 0.1 V, and the highest peak-to-valley current ratio is 6.2 at 40 K. The equilateral symmetry of the NDR effect in a QWR FET is also observed. The pronounced NDR effects in a trench-type QWR FET are advantageous for high-speed and low power-consumption devices. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 4 )