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Observation of the transition of coherent/sequential electron tunneling in a resonant tunneling regime of a GaAs/AlAs three-terminal quantum-well heterostructure

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3 Author(s)
Gyungock Kim ; Electronics and Telecommunications Research Institute, Kajeong-dong 161, Yusong-gu, Taejon, Korea 305-600 ; Roh, Dong Wan ; Paek, Seung Won

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We observe the coherency of electron tunneling preserved up to the resonant peak voltage by measuring scattered electrons in a GaAlAs/GaAs three-terminal heterostructure. The abrupt increase of the scattered electron current, which onsets at the resonant peak voltage, indicates the breakdown of the coherency of electron tunneling. The experimental result indicates that the abrupt nature of the electron scattering in the resonant tunneling regime can be utilized in switching and logical devices. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 4 )

Date of Publication:

Jul 2003

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