Transmission electron microscopy observation of high-temperature γ-FeSi₂ precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source

This work reports the observation of high-temperature γ-FeSi₂ precipitates of tens of nanometers in diameter embedded in silicon formed by iron implantation using a metal vapor vacuum arc ion source followed by a dual step annealing process. It was found that the implantation temperature and annealing conditions played important roles on the shape and phase formation of the FeSi₂ precipitates. When the implantation temperature was high (about 380 °C), only β-FeSi₂ precipitates were formed. When the implantation temperature was low (about -100 °C), after the dual step annealing, in addition to β-FeSi₂, γ-FeSi₂ precipitates coherent with the silicon substrate were formed. © 2003 American Institute of Physics.