By Topic

Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-xAs1-yNy alloy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Geddo, M. ; INFM-UdR Pavia, Via Bassi 6, I-27100 Pavia, Italyand Dipartimento di Fisica della Università di Parma, Viale delle Scienze 7a, I-43100 Parma, Italy ; Guizzetti, G. ; Capizzi, M. ; Polimeni, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The binding energy of the heavy-hole ground-state exciton in In0.25Ga0.75As1-yNy/GaAs single quantum wells (y=0, 0.011) was experimentally derived by photoreflectance measurements. We measured a binding energy of 6.6 and 8.5 meV for the N-free and the N-containing sample, respectively. The observed increase of the exciton binding energy can be accounted for by an increase of the exciton reduced mass of about 30% upon N introduction into the InxGa1-xAs lattice, consistently with recent experimental results and in agreement with earlier theoretical predictions. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 3 )