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Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor

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1 Author(s)
Lin, Y.S. ; Department of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Yung-Kang City, Tainan County, Taiwan, Republic of China

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1637147 

This investigation proposes an InP/InGaAs composite-collector double heterojunction bipolar transistor (CC-DHBT) grown by metalorganic chemical vapor deposition. The improved structure exhibits the advantages of no knee-shaped characteristics, no switching effect, low output conductance, a high two-terminal base–collector breakdown voltage (BV) that exceeds 20 V, and high three-terminal breakdown voltages (BVCEO≫15 V, BVCBO≫20 V). The current gain is over unity at ultralow collector current density of 10-4A/cm2. These characteristics are attributed to the optimized collector design. Furthermore, this study elucidates complex breakdown mechanisms in the CC-DHBTs. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 26 )

Date of Publication:

Dec 2003

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