Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

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Epitaxial SrBi₂Nb₂O₉ thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi₂Nb₂O₉(115)/Pt(111) bilayers. The influence of the Pt bottom electrode on the growth of SrBi₂Nb₂O₉ films is discussed in terms of atomic matching at the SrBi₂Nb₂O₉/Pt interface. The remanent polarization is close to 6 μC/cm², with a coercive field of 140 kV/cm. The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after 2.10⁹ switching cycles, confirming the fatigue resistance of the film. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters (Volume:83 , Issue: 26 )

Date of Publication: Dec 2003

Page(s):: 5500 - 5502
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.1634387
Product Type:: Journals & Magazines

Date of Current Version :: 18 June 2009
Issue Date :: Dec 2003

Author(s)

Duclere, J.-R.
Laboratoire de Chimie du Solide et Inorganique Moléculaire, Institut de Chimie de Rennes, UMR 6511 CNRS/Université de Rennes1, Campus de Beaulieu, 35042 Rennes Cedex, France
Guilloux-Viry, M. ; Bouquet, V. ; Perrin, A. ; Cattan, E. ; Soyer, C. ; Remiens, D.