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Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1-y grown on GaAs(001) substrates

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3 Author(s)
Hong, Y.G. ; Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407 ; Nishikawa, A. ; Tu, C.W.

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We report gas-source molecular-beam epitaxy of Ga1-xInxNyP1-y grown on GaAs(100) substrates. Nitrogen incorporation dramatically reduces the Ga1-xInxP band gap. With nitrogen incorporation, the photoluminescence (PL) peak energy exhibits an inverted S-shaped dependence with temperature, and the low-temperature PL spectra exhibit an asymmetric line shape with a low-energy tail. Both indicate the presence of N-related localized states, which dominate the radiative recombination processes at low temperature. N incorporation significantly reduces the free-electron concentration and mobility. The free-electron concentration of N-containing Ga0.48In0.52N0.005P0.995 decreases dramatically with high-temperature annealing (800 °C), from 4.4×1018 to 8.0×1016cm-3. This is believed to be due to passivation of Si by N through the formation of Si–N pairs. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 26 )