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Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

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6 Author(s)
Schenk, H.P.D. ; Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications (CRHEA–CNRS), Rue Bernard Grégory, Sophia Antipolis, F–06560 Valbonne, France ; Feltin, E. ; Laugt, M. ; Tottereau, O.
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Waveguiding GaN epitaxial layers have been grown by low-pressure metalorganic vapor phase epitaxy on Si(111) substrates using AlN/GaN short period-superlattice (SPS) buffer layer systems. The AlN/GaN SPS has been studied by x-ray diffraction where it appears as pseudoternary AlxGa1-xN alloy. Using elastic theory an effective Al content of 44% is calculated. This value is confirmed by the average Al content calculated from the AlN:GaN layer thickness ratio measured in cross-section transmission electron microscopy. The GaN waveguiding properties have been assessed using the prism coupling method. They sensibly improve with the total thickness of the underlying AlN/GaN superlattice as well as if an additional AlN/GaN SPS is grown atop the GaN waveguiding layer. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 25 )