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Ge1-xSnx alloys pseudomorphically grown on Ge(001)

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4 Author(s)
Ladron de Guevara, H.Perez ; Instituto de Investigación En Comunicación Optica (IICO), Universidad Autónoma de San Luis Potosı´, Alvaro Obregón 64, San Luis Potosı´, S. L. P. 78000, México ; Rodrı guez, A.G. ; Navarro-Contreras, H. ; Vidal, M.A.

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Ge1-xSnx alloys were grown on Ge(001) substrates in a conventional rf sputtering system. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. The Sn concentration was determined assuming Vegard’s law for the alloy lattice parameter. At low concentrations, we observed that Ge1-xSnx layers have pseudomorphic characteristics for layer thickness from 320 to 680 nm. These characteristics of Ge1-xSnx layers agree with the People and Bean critical thickness model. This structural study opens the possibility of growing dislocation-free Ge1-xSnx alloys below the critical thickness. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 24 )