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Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

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13 Author(s)
Moser, N.A. ; Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7322 ; Gillespie, J.K. ; Via, G.D. ; Crespo, A.
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Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an activation energy of ∼1.5 eV. This value is largely independent of surface cleaning processes or the type of passivation film (SiNX, Sc2O3, MgO) used to reduce the current collapse phenomena in the devices. However, the magnitude of the isolation current is a strong function of the surface treatment employed. The lowest isolation currents for conditions under which current collapse is mitigated are obtained using Sc2O3 passivation layers. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 20 )

Date of Publication:

Nov 2003

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