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Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm

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5 Author(s)
Sukhotin, M. ; Electrical Engineering Department, University of California, Los Angeles, California 90095 ; Brown, E.R. ; Driscoll, D. ; Hanson, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1622121 

This letter reports the measurement of photocarrier lifetime in ErAs:InGaAs epitaxial material grown on InP substrates. The measurement technique is ultrafast time-resolved phototransmission using a 1.55 μm mode-locked erbium-doped fiber laser. A lifetime of 3.56 ps is found in a sample containing an InAlAs smoothing layer, compared to 0.96 ps in a sample without any InAlAs. The difference is explained using a model of ambipolar diffusion of photocarriers. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 19 )

Date of Publication:

Nov 2003

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