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Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

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9 Author(s)
Kazlauskas, K. ; Institute of Materials Science and Applied Research, Vilnius University, Saule˙tekio 9-III, LT-2040 Vilnius, Lithuania ; Tamulaitis, G. ; Zukauskas, A. ; Khan, M.A.
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The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 18 )