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Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN

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5 Author(s)
Jeong, T.S. ; Department of Physics and Semiconductor Physics Research Center (SPRC), Jeonbuk National University, Jeonju 561-756, South Korea ; Youn, C.J. ; Han, M.S. ; Yang, J.W.
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We have studied the influence of electric fields on the Mg-doped p-GaN by using Raman scattering and photocurrent (PC) measurement. It has been observed that the E2 (LO) mode was quenched upon increasing the electric field. To explain this effect, the combined results obtained from the electric-field-induced Raman scattering and the PC measurement were analyzed. As a result, we have found that the damping of E2 (LO) mode is caused to the phonon–hole scattering due to a strong interaction between the phonons and the photogenerated hole carriers with increasing the applied electric field. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 17 )

Date of Publication:

Oct 2003

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