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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

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7 Author(s)
Kaneta, Akio ; Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto, 606-8501 Japan ; Mutoh, Takashi ; Kawakami, Yoichi ; Fujita, Shigeo
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Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting InxGa1-xN/GaN single-quantum-well structure by comparing the photoluminescence (PL) spectra taken by illumination-collection mode (I-C mode) and those by illumination mode (I-mode) in scanning near-field microscopy. The PL data mapped with PL lifetimes, as well as with PL spectra, revealed that the probed area could be classified into four different regions whose dominating processes are (1) radiative recombination within a probing aperture, (2) nonradiative recombination within an aperture, (3) diffusion of photogenerated excitons/carriers out of an aperture resulting in localized luminescence, and (4) the same diffusion process as (3), but resulting in nonradiative recombination. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 17 )