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Browse Journals & Magazines > Applied Physics Letters ...> Volume:83 Issue:15 Help

Silicon substrate integrated high Q-factor parallel-plate ferroelectric varactors for microwave/millimeterwave applications

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4 Author(s)
Vorobiev, A. ; Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden ; Rundqvist, P. ; Khamchane, K. ; Gevorgian, S.

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Parallel-plate Ba0.25Sr0.75TiO3 (BST) varactors with a record high Q factor are fabricated on Si substrate. At 45 GHz the Q factor is about 40, and the tuneability at 25 V is more than 40% in the measured frequency range 0.045–45 GHz. The improvement in the Q factor is achieved by using a thick bottom electrode consisting of Pt (50 nm)/Au (0.5 μm) allowing us to reduce the microwave losses associated with metal layers. The BST films exhibit relatively high permittivity (150) at zero bias and high resistivity (1010 Ω cm) at fields up to 700 kV/cm. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:83 ,  Issue: 15 )

Date of Publication: Oct 2003

Page(s):
3144 - 3146
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1619213
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2003

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