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We study longitudinal electron transport in InGaN/GaN multiple quantum wells (MQWs) at moderate magnetic fields. We observe a stepwise behavior of both the Hall coefficient and magnetoresistivity. The peculiarities are explained by a magnetic-field-induced localization of electrons in a two-dimensional (2D) potential relief of the InGaN MQW due to composition fluctuations. We extend the model for a magnetic localization of electrons, treating every QW like a quasi-2D system with a cylindrical potential relief. The calculated values of the decrease of the sheet electron concentrations in a magnetic field based on such an assumption for 2D density of states in a InGaN MQW system are in good accordance with the experimentally obtained values. © 2003 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:83
,
Issue:
13
)
Date of Publication: Sep 2003
- Page(s):
- 2590 - 2592
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.1613999
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Sep 2003
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