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We report the design, fabrication, and characterization of room-temperature Si single-electron memories using nanoimprint lithography (NIL). The devices consist of a narrow channel metal–oxide–semiconductor field-effect transistor and a sub-10-nm storage dot, which is located between the channel and the gate. The memories operate at room temperature by charging and discharging one electron in or out of the dot. The charge retention time is up to two days. NIL is shown to be tailored for nanodevice fabrication. By using NIL as a nanolithography tool, the single-electron memory is more feasible for mass production. © 2003 American Institute of Physics.