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Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

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6 Author(s)
Yamamoto, Kazuhiko ; ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19, Nishikujo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan ; Hayashi, Shigenori ; Niwa, Masaaki ; Asai, Masayuki
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The electrical and physical properties of thin hafnium oxide (HfO2) films fabricated by a remote plasma oxidation of a hafnium metal were investigated. The HfO2 capacitors with TiN electrodes exhibited excellent electrical characteristics such as equivalent oxide thickness (EOT) of 0.65 nm with leakage current density of 2.7 A/cm2 at the gate bias of Vfb-1 (V). The HfO2 thickness dependence of the EOT demonstrated that the permittivity of 19 for HfO2 layer and the interfacial layer thickness of 0.36 nm. X-ray photoelectron spectroscopy study revealed that the oxygen radicals oxidize the Hf metal selectively than Si substrate, leading to an increase of permittivity of HfO2 with reduced interfacial layer growth. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 11 )

Date of Publication:

Sep 2003

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