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Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

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6 Author(s)
Kan, E.W.H. ; Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576, Singaporeand Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore ; Choi, W.K. ; Leoy, C.C. ; Chim, W.K.
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A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than 900 °C. The improved crystallinity of the nanodots synthesized via the double-step annealing process was investigated using Raman spectroscopy and transmission electron microscopy diffraction patterns. A mechanism of growth at different annealing temperature profiles is proposed. The optimum annealing profile was 1000 °C for 300 s followed by 700 °C for 60 s. The mean diameter of the dots at such annealing condition was found to be 9.5±1.6 nm with an area density of ∼5×1011cm-2. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 10 )

Date of Publication:

Sep 2003

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