By Topic

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Okojie, R.S. ; NASA Glenn Research Center, 21000 Brookpark Road, M/S 77-1, Cleveland, Ohio 44135 ; Holzheu, Thomas ; Huang, XianRong ; Dudley, Michael

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1606497 

High-resolution x-ray diffractometry was used to measure the lattice mismatch and misorientation in n-type 4H-SiC epilayers grown homoepitaxially on p-type 4H-SiC as function of different nitrogen doping levels. The spatially averaged lattice mismatch increased from 1.0×10-5 to 4.0×10-5, 6.3×10-5, 8.8×10-5, and 11.6×10-5 in epilayers doped 4.1×1017 cm-3, 2.6×1018 cm-3, 1.7×1019 cm-3, 2.2×1019, and 4×1019, respectively. The resolved multiple subsidiary peaks in the rocking curve of the epilayers doped 2.2×1019 and 4×1019 cm-3 are likely due to high density of domain boundaries. The increase in mismatch with doping, is attributed to the substitutional nitrogen incorporated preferentially in the host carbon sites of the 4H-SiC epilayer. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:83 ,  Issue: 10 )