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High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

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5 Author(s)
Tansu, N. ; Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA 18015and Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691 ; Quandt, Andrew ; Kanskar, M. ; Mulhearn, William
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Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 μm, with a threshold-current density of 220 A/cm2 for 2000 μm cavity-length (Lcav) devices. A threshold current density of only 615 A/cm2 was achieved for cw operation at a temperature of 100 °C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20 °C. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:83 ,  Issue: 1 )