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Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

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9 Author(s)
Natali, F. ; Centre National de la Recherche Scientifique, Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Rue B. Grégory, 06560 Sophia Antipolis, France ; Semond, F. ; Massies, J. ; Byrne, D.
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We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using ammonia. The structural properties are assessed by reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and x-ray diffraction. Refractive index values are deduced from room-temperature spectroscopic ellipsometry. Optical data analysis is performed using the Kramers-Krönig relation in the transparent spectral region, from 1.6 to 3.2 eV. Evidence is presented showing the influence of strain and dislocation density on the AlN layer refractive index. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 9 )

Date of Publication:

Mar 2003

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