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Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting

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7 Author(s)
Scarpulla, M.A. ; Department of Materials Science & Engineering, University of California at Berkeley, Berkeley, California 94720Lawrence Berkeley National Laboratory, Berkeley, California 94720 ; Dubon, O.D. ; Yu, K.M. ; Monteiro, O.
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We demonstrate the formation of ferromagnetic Ga1-xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x≈0.03. A remanent magnetization persisting above 85 K has been observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga1-xMnxAs is rather robust to the presence of structural defects. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 8 )