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Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures

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8 Author(s)
Cuenya, B.Roldan ; Angewandte Physik, Gerhard-Mercator-Universität, D-47048 Duisburg, Germany ; Doi, M. ; Keune, W. ; Hoch, S.
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An optimized heterostructure design and an optimized surface sputter-cleaning procedure allow the growth of high-quality epitaxial Fe(001) thin films at Ts≪∼50 °C on selectively doped GaAs/Al0.35Ga0.65As heterostructures, while retaining the high quality transport property of the two-dimensional electron gas. Magneto-optic Kerr effect measurements and model calculations indicate a dominant uniaxial in-plane anisotropy (easy axis along [110], hard axis along [1-10]) and small coercivity (∼15 Oe). Interface sensitive 57Fe Mössbauer measurements prove the absence of both magnetic “dead layers” and “half-magnetization” phases (compared to pure Fe), and provide evidence for intermixing within a few monolayers, retaining, however, a metallic Fe state and high Fe magnetic moments at the interface. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 7 )

Date of Publication:

Feb 2003

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