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Passivation of defects in nitrogen-doped polycrystalline Cu2O thin films by crown-ether cyanide treatment

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7 Author(s)
Okamoto, Y. ; Institute of Applied Physics, University of Tsukuba, CREST, Japan Science and Technology Corporation, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan ; Ishizuka, S. ; Kato, S. ; Sakurai, T.
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Crown-ether cyanide treatment, which simply involves immersion in KCN solutions containing 18-crown-6 followed by rinse, is studied in relation to electrical and optical properties of nitrogen-doped, polycrystalline Cu2O thin films, and its effect is compared with that of hydrogen treatment. By the crown-ether cyanide treatment, the luminescence intensity due to the near-band-edge emission of Cu2O at around 680 nm is enhanced, and the hole density is increased from the order of 1016 to 1017cm-3, analogous to hydrogen treatment. The effects of the passivation by the hydrogen treatment completely disappear after annealing at 350 °C, while those of the crown-ether cyanide treatment stay unchanged after the same annealing treatment. From these results, the crown-ether cyanide treatment for polycrystalline Cu2O thin films can be concluded to be a more suitable method of passivating defects than the hydrogen treatment. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 7 )

Date of Publication: Feb 2003

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