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Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

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3 Author(s)
Smets, A.H.M. ; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ; Kessels, W.M.M. ; van de Sanden, M.C.M.

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The scaling behavior of the surface morphology of hydrogenated amorphous silicon deposited from a SiH3 dominated plasma has been studied using atomic force microscopy and in situ ellipsometry. The observed substrate temperature dependence of growth exponent β reflects a crossover behavior from random deposition at 100 °C to a surface diffusion controlled smoothening around 250 °C to full surface relaxation around 500 °C. This crossover behavior has been reproduced by Monte Carlo simulations assuming a site dependent surface diffusion process, revealing an activation energy of ∼1.0 eV for the ruling surface smoothening mechanism. The implications for a-Si:H growth are discussed. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 6 )