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Control of emission characteristics of silicon field emitter arrays by ion implantation technique

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4 Author(s)
Kanemaru, S. ; Electrotech. Lab., Ibaraki, Japan ; Hirano, T. ; Tanoue, H. ; Itoh, J.

We report the characteristics of gated Si emitters, which are doped with various impurities by the ion implantation technique. We have found saturation phenomena in Fowler-Nordheim plots in boron doped emitters, which are useful for the decrease of emission fluctuations.

Published in:

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Date of Conference:

July 30 1995-Aug. 3 1995

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