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Compensation mechanisms in low-temperature-grown Ga1-xMnxAs investigated by scanning tunneling spectroscopy

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9 Author(s)
Mahieu, G. ; Institut d’Electronique et de Microélectronique du Nord, IEMN, (CNRS, UMR 8520) Département ISEN, 41 bd Vauban, 59046 Lille Cédex, France ; Condette, P. ; Grandidier, B. ; Nys, J.P.
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Ga1-xMnxAs layers with Mn composition of up to 6.2% are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. We identify in the tunneling spectra contributions from MnGa- acceptor states, compensating AsGa2+ donor states, and additional compensating donor states, which we suggest to be Mni2+ interstitials. On basis of the observed Fermi level shift and a charge carrier compensation analysis, we deduce the concentration of Mni2+ interstitials. Furthermore, scanning tunneling microscopy images suggest an inhomogeneous distribution of Mn dopant atoms. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 5 )