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White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

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6 Author(s)
Park, Joung Kyu ; Advanced Materials Division, KRICT, Taejon 305-600, Korea ; Lim, Mi Ae ; Kim, Chang Hae ; Park, Hee Dong
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1544055 

We have synthesized a Eu2+-activated Sr2SiO4 yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 5 )

Date of Publication:

Feb 2003

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