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Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2Ar plasmas with changing mixtures

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4 Author(s)
Fuller, N.C.M. ; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Telesca, Donald A. ; Donnelly, Vincent M. ; Herman, Irving P.

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The etch rate and surface SiCl and SiCl2 concentrations abruptly increase and the surface Si concentration abruptly decreases as the chlorine fraction is increased above a threshold value during Si etching by an inductively coupled Cl2Ar mixture plasma. The surface species are detected by laser desorption of the chlorinated adlayer using laser-induced fluorescence and plasma-induced emission of the desorbed species. This threshold chlorine fraction is 75% for 80 eV average ion energy, and increases with the average energy of ions incident on the surface. This unexpected observation is attributed to a phase transition between two states of surface chlorination and morphology. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 26 )

Date of Publication:

Jun 2003

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