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Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers

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6 Author(s)
Jia, T.Q. ; Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, People’s Republic of ChinaState Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou, 510275, People’s Republic of China ; Xu, Z.Z. ; Li, X.X. ; Li, R.X.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1583857 

We report measurements of damage threshold and ablation depth for SiO2 and CaF2 irradiated under lasers at wavelengths of 800 and 400 nm for duration of 45–800 fs. These results can be well understood by using a developed avalanche model. The model includes the production of conduction band electrons (CBEs), laser energy deposition, and CBE diffusion. The evolution of microexplosion is investigated based on this model. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 24 )

Date of Publication: Jun 2003

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