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Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

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6 Author(s)
Tereshchenko, O.E. ; Institute of Semiconductor Physics, Novosibirsk State University, 630090 Novosibirsk, Russia ; Paget, D. ; Chiaradia, P. ; Bonnet, J.E.
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A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality InAs(001) surfaces. The surface structure and chemistry were characterized using low-energy electron diffraction and photoemission spectroscopy as a function of UHV temperature. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing arsenic and small amounts of InClx. Annealing at 330 °C induces desorption of this overlayer and reveals a clean arsenic-rich (2×4)/c(2×8) surface. The indium-rich (4×2)/c(8×2) reconstruction is obtained upon further annealing to 410 °C. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 24 )