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Browse Journals & Magazines > Applied Physics Letters ...> Volume:82 Issue:23 Help

Growth of Si nanocrystals on alumina and integration in memory devices

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7 Author(s)
Baron, T. ; Laboratoire des Technologies de la Microélectronique, UMR 5129 CNRS, CEA-Grenoble, Leti-DTS, 17 rue des Martyrs, F-38054 Grenoble, France ; Fernandes, A. ; Damlencourt, J.F. ; De Salvo, B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1577409 

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 23 )

Date of Publication: Jun 2003

Page(s):
4151 - 4153
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1577409
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2003

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