IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:82 Issue:23 Help

Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001)

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Travlos, A. ; Institute of Materials Science, National Center for Scientific Research, “Demokritos”, 15310 Ag. Paraskevi, Athens, Greece ; Boukos, N. ; Apostolopoulos, G. ; Dimoulas, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1581985 

The origin of the superstructure observed in epitaxial yttrium oxide (Y2O3) layers on Si (001) is determined by electron energy loss spectroscopy (EELS). The oxygen K edge is measured both in the superstructure and a defect-free region of the Y2O3 layers and they are compared to EELS spectra obtained from bulk stoichiometric and reduced Y2O3. It is shown that as a result of the epitaxial growth, oxygen vacancies order into a superstructure creating nonstoichiometric regions in an otherwise stoichiometric Y2O3 layer. Furthermore, it is shown that oxygen deficiency introduces a change of the density of states of the lower conduction band of Y2O3. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 23 )

Date of Publication: Jun 2003

Page(s):
4053 - 4055
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1581985
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2003

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.