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Cyclotron resonance of terahertz photoresponse in two-dimensional polar semiconductors at high temperatures

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2 Author(s)
Lei, X.L. ; Department of Physics, Shanghai Jiaotong University, 1954 Huashan Road, Shanghai 200030, China ; Liu, S.Y.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1579853 

Far infrared photoresponse of magnetoresistivity ΔRxx of two-dimensional electron systems is investigated theoretically at high temperatures. Photon-assisted impurity and phonon scatterings, rather than the electron heating, are shown to be the dominant mechanisms for high-temperature photoresponse at cyclotron resonance. Based on the theory developed for electron magnetotransport driven by intense terahertz radiations, we have calculated the far infrared photoresistivity of a GaAs/AlGaAs heterostructure at temperature T=150 K, predicting notable cyclotron resonance of ΔRxx, in agreement with the experimental finding. Contrary to low temperature case, where the electron heating is almost solely responsible for the cyclotron resonance of ΔRxx, at T=150 K electron-heating contribute at most a small fraction of the total response. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 22 )

Date of Publication:

Jun 2003

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