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We report on the optoelectronic (OE) mixing characteristics of a Schottky-enhanced InGaAs-based metal–semiconductor–metal photodetector (MSM–PD). The measured frequency bandwidth of such a mixer is less than that of a corresponding photodetector. The mixing efficiency depends on the light modulation, local oscillator, and mixed signal frequencies and decreases nonlinearly with decrease in optical power. This is not observed in GaAs-based and non-Schottky-enhanced InGaAs MSM–PDs. We present a circuit model of the OE mixer to explain the experimental results. © 2003 American Institute of Physics.