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Browse Journals & Magazines > Applied Physics Letters ...> Volume:82 Issue:20 Help

Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

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8 Author(s)
Brook, A.J. ; Department of Physics, University of Bath, Bath, BA2 7AY United Kingdom ; Bending, S.J. ; Pinto, J. ; Oral, A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1576914 

We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III–V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 20 )

Date of Publication: May 2003

Page(s):
3538 - 3540
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1576914
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2003

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