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Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

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6 Author(s)
Leu, Ching-Chich ; National Nano Device Laboratories, Hsinchu 30043, Taiwan, Republic of China ; Chen, Chih-Yuan ; Chien, Chao-Hsin ; Mao-Nan Chang
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Scanning capacitance microscopy was used to image the polarization-induced microstructural patterns of sol-gel derivative SrBi2Ta2O9 (SBT) thin films. A sharp image contrast was induced between the nanosized domains owing to the various polarities, so that the domain structure in the SBT thin film was clearly revealed. As a result, the switched and unswitched regions could be unequivocally identified. This investigation also confirms that the reversal polarization process of a ferroelectric domain is much easier inside a large grain than in a small grain. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 20 )