By Topic

Domain structure study of SrBi2Ta2O9 ferroelectric thin films by scanning capacitance microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Leu, Ching-Chich ; National Nano Device Laboratories, Hsinchu 30043, Taiwan, Republic of China ; Chen, Chih-Yuan ; Chien, Chao-Hsin ; Mao-Nan Chang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1576308 

Scanning capacitance microscopy was used to image the polarization-induced microstructural patterns of sol-gel derivative SrBi2Ta2O9 (SBT) thin films. A sharp image contrast was induced between the nanosized domains owing to the various polarities, so that the domain structure in the SBT thin film was clearly revealed. As a result, the switched and unswitched regions could be unequivocally identified. This investigation also confirms that the reversal polarization process of a ferroelectric domain is much easier inside a large grain than in a small grain. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 20 )