Silicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015 atoms/cm2 and 2×1015 atoms/cm2, respectively. After annealing at 550 °C, secondary ion mass spectroscopy determined that the diffusivity of boron in amorphous silicon is significantly enhanced in the presence of fluorine. Ellipsometry and cross-sectional transmission electron microscopy indicate the enhanced diffusion only occurs in the amorphous layer. Fluorine increases the boron diffusivity by approximately five orders of magnitude at 550 °C. It is proposed that the ability of fluorine to reduce the dangling bond concentration in amorphous silicon may reduce the formation energy for mobile boron, enhancing its diffusivity. © 2003 American Institute of Physics.