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Fluorine-enhanced boron diffusion in amorphous silicon

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6 Author(s)
Jacques, J.M. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Robertson, L.S. ; Jones, K.S. ; Law, M.E.
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Silicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015atoms/cm2 and 2×1015atoms/cm2, respectively. After annealing at 550 °C, secondary ion mass spectroscopy determined that the diffusivity of boron in amorphous silicon is significantly enhanced in the presence of fluorine. Ellipsometry and cross-sectional transmission electron microscopy indicate the enhanced diffusion only occurs in the amorphous layer. Fluorine increases the boron diffusivity by approximately five orders of magnitude at 550 °C. It is proposed that the ability of fluorine to reduce the dangling bond concentration in amorphous silicon may reduce the formation energy for mobile boron, enhancing its diffusivity. © 2003 American Institute of Physics.

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Applied Physics Letters  (Volume:82 ,  Issue: 20 )