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Browse Journals & Magazines > Applied Physics Letters ...> Volume:82 Issue:20 Help

Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

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5 Author(s)
Chauveau, J.-M. ; Paul Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany ; Trampert, A. ; Ploog, K.H. ; Pinault, M.-A.
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We investigated the influence of the growth temperature (Tgr) on the microstructure and on the optical properties of GaInNAs quantum wells (QWs). By comparing the structural information (transmission electron microscopy) with the optical properties (photoluminescence spectroscopy), we demonstrate that high photoluminescence efficiency of GaInNAs QWs is achieved only when the two-dimensional growth mode is preserved, which can be obtained at a low Tgr even for high In content. We also show composition modulations in the GaInNAs QWs, which can lead to the interface roughness. © 2003 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:82 ,  Issue: 20 )

Date of Publication: May 2003

Page(s):
3451 - 3453
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1577393
Date of Current Version :
18 June 2009
Issue Date :
May 2003

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