Cart (Loading....) | Create Account
Close category search window

Effect of Al2O3 capping layer on suppression of interfacial SiO2 growth in HfO2/ultrathin SiO2/Si(001) structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kundu, Manisha ; MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC-AIST), Tsukuba 305-8562, Japan ; Miyata, Noriyuki ; Nabatame, Toshihide ; Horikawa, Tsuyoshi
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We investigated the effect a 1.2-nm-thick Al2O3 capping layer had on suppressing interfacial Si oxidation in a 2.6-nm-HfO2/0.35-nm-SiO2/Si(001) structure during postdeposition annealing in an oxygen ambient. An incubation period (IP) was initially observed during which the HfO2/Si interface exhibited remarkable stability without any interfacial SiO2 growth. This was then followed by very slow interface oxidation. Our detailed study suggested that low oxidant diffusion through the capping layer determined the effective IP. Furthermore, HfO2/Si interface oxidation, which proceeded through a two-step process that was similar to an uncapped structure, was severely constrained by the limited availability of oxygen at the Al2O3/HfO2 interface. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 20 )

Date of Publication:

May 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.