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Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

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4 Author(s)
Arulkumaran, S. ; Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan ; Egawa, T. ; Ishikawa, H. ; Jimbo, T.

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We report on the studies of the temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors (HEMTs) for the temperature range 20–400 °C. The results show that the temperature dependence of gate–leakage current for AlGaN/GaN HEMTs at subthreshold regime (VGS=-6.5 V) have both negative and positive trends. It has been observed that the leakage current decreases with the temperature up to 80 °C. Above 80 °C, the leakage current increases with the temperature. The negative temperature dependence of leakage current with the activation energy +0.61 eV is due to the impact ionization. The positive temperature dependence of leakage current with the activation energy -0.20 eV is due to the surface related traps, and the activation energy -0.99 eV is due to the temperature assisted tunneling mechanism. The drain voltage at a fixed drain–leakage current reveals the occurrence of both positive (+0.28 V/K) and negative (-0.53 V/K) temperature coefficients. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 18 )