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CuAu-I-type ordered structures in InxAl1-xAs epilayers grown on (001) InP substrates

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2 Author(s)
Lee, Ho Seong ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea ; Yong Lee, Jeong

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Transmission electron microscopy (TEM) measurements were carried out to investigate the spontaneously ordered structure in InxAl1-xAs epitaxial layers grown on (001) InP substrates. The selected area diffraction pattern showed two sets of superstructure reflections with symmetrical intensity at (100) and (010) positions, indicating that CuAu-I-type ordered structures with two different variants were formed in the InxAl1-xAs epitaxial layers. The dark-field TEM image showed that the size of the CuAu-I-type ordered domains with a needle-like shape was approximately 3∼4 nm thick, with lengths ranging from 10 to 20 nm. Based on the TEM results, explanations are given to describe the formation of only two variants of CuAu-I-type ordering. © 2003 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:82 ,  Issue: 18 )